features high voltage electrically isolated base plate 3000 v rms isolating voltage industrial standard package simplified mechanical designs, rapid assembly high surge capability large creepage distances ul e78996 approved this new irk serie of magn-a-paks modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. the semiconductors are electrically isolated from the metal base, allowing com- mon heatsinks and compact assemblies to be built. they can be interconnected to form single phase or three phase bridges or as ac-switches when modules are connected in anti-parallel mode. these modules are intended for general purpose appli- cations such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, u.p.s., etc.). description i t(av) @ 85c 170 230 250 a i t(rms) 377 510 555 a i tsm @ 50hz 5100 7500 8500 a @ 60hz 5350 7850 8900 a i 2 t @ 50hz 131 280 361 ka 2 s @ 60hz 119 256 330 ka 2 s i 2 t 1310 2800 3610 ka 2 s v drm / v rrm up to1600 up to 2000 up to1600 v t j range -40 to 130 o c parameters irk.170.. irk.230.. irk.250.. units major ratings and characteristics scr / scr and scr / diode 170a 230a 250a magn-a-pak ? ? ? ? ? power modules irk. series 1 bulletin i27102 rev. c 05/02 www.irf.com
irk.170, .230, .250 series 2 bulletin i27102 rev. c 05/02 www.irf.com parameters irk.170 irk.230 irk.250 units conditions i t(av) maximum average on-state current 170 230 250 a 180 o conduction, half sine wave @ case temperature 85 85 85 o c i t(rms) maximum rms on -state current 377 510 555 a as ac switch i tsm maximum peak, one-cycle on-state, 5100 7500 8500 a t = 10ms no voltage non-repetitive surge current 5350 7850 8900 t = 8.3ms reapplied 4300 6300 7150 t = 10ms 100% v rrm 4500 6600 7500 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 131 280 361 ka 2 s t = 10ms no voltage initial t j = t j max 119 256 330 t = 8.3ms reapplied 92.5 198 255 t = 10ms 100% v rrm 84.4 181 233 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 1310 2800 3610 ka 2 s t = 0.1 to 10ms, no voltage reapplied v t(to)1 low level value of threshold voltage 0.89 1.03 0.97 v (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. v t(to)2 high level value of threshold voltage 1.12 1.07 1.00 (i > x i t (av) ), t j = t j max. r t1 low level on-state slope resistance 1.34 0.77 0.60 m ? (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. r t2 high level on-state slope resistance 0.96 0.73 0.57 (i > x i t (av) ), t j = t j max. i tm = x i t(av) , t j = t j max., 180 o conduction av. power = v t(to) x i t(av) + r f x (i t(rms) ) 2 i h maximum holding current 500 500 500 ma anode supply=12v, initial i t =30a, t j =25 o c i l maximum latching current 1000 1000 1000 anode supply=12v, resistive load=1 ? gate pulse: 10v, 100 s, t j = 25c type number voltage v rrm v drm , maximum v rsm , maximum non-repetitive i rrm i drm max code repetitive peak reverse and peak reverse voltage @ 130c off-state blocking voltage vvm a 04 400 500 50 irk.170- 08 800 900 irk.250- 12 1200 1300 14 1400 1500 16 1600 1700 irk.230- 08 800 900 50 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 t d typical delay time 1.0 st j = 25 o c, gate current=1a di g/dt =1a/s t r typical rise time 2.0 vd = 0,67% v drm i tm = 300 a ; -di/dt=15 a/s; t j = t j max ; vr = 50 v; dv/dt = 20 v/s ; gate 0 v, 100 ohm voltage ratings electrical specifications on-state conduction switching t q typical turn-off time 50 - 150 s v tm maximum on-state voltage drop 1.60 1.59 1.44 v parameters irk.170 irk.230 irk.250 units conditions
irk.170, .230, .250 series 3 bulletin i27102 rev. c 05/02 www.irf.com i rrm max. peak reverse and off-state 50 ma t j =t j max. i drm leakage current v ins rms isolation voltage 3000 v 50hz, circuit to base, all termin. shorted, 25c,1s dv/ dt critical rate of rise of off-state voltage 1000 v/ st j = t j max, exponential to 67% rated v drm t j junction operating temperature -40 to 130 o c t stg storage temperature range -40 to 150 o c r thjc maximum thermal resistance junction to case mounting surface flat, smooth and greased (per module) t mounting tourque 10% a mounting compound is recommended and the map to heatsink 4 to 6 nm tourque should be rechecked after a period of busbar to map 4 to 6 nm about 3 hours to allow for the spread of the compound wt approximate weight 500 g 17.8 oz case style magn-a-pak i p gm maximum peak gate power 10.0 w tp 5ms, t j = t j max. p g(av) maximum average gate power 2.0 w f = 50hz, t j = t j max. +i gm maximum peak gate current 3.0 a tp 5ms, t j = t j max. -v gt max. peak negative gate voltage 5.0 v tp 5ms, t j = t j max. v gt maximum required dc gate 4.0 v t j = - 40 o c anode supply = 12v, resistive voltage to trigger 3.0 v t j = 25 o c load ; ra = 1 ? 2.0 v t j = t j max. i gt maximum required dc gate 350 ma t j = - 40 o c anode supply = 12v, resistive current to trigger 200 ma t j = 25 o c load ; ra = 1 ? 100 ma t j = t j max. v gd maximum gate voltage that will not trigger i gd maximum gate current that will not trigger di/ dt max rate of rise of turned-on current blocking triggering thermal and mechanical specifications 0.25 v @ t j = t j max., rated v drm applied 10.0 ma @ t j = t j max., rated v drm applied 500 a/ s@ t j = t j max., i tm = 400 a rated v drm applied 0.17 0.125 0.125 k/w per junction, dc operation r thc-s thermal resistance, case to heatsink 0.02 0.02 0.02 k/w parameters irk.170 irk.230 irk.250 units conditions parameters irk.170 irk.230 irk.250 units conditions parameters irk.170 irk.230 irk.250 units conditions
irk.170, .230, .250 series 4 bulletin i27102 rev. c 05/02 www.irf.com thyristor diode i t(av) / i f(av) @ t c v drm v rsm v rrm 170a 230a 250a v rrm v rsm @ 85c @ 85c @ 85c 1400 1500 2000 irkh170-14d20 irkh230-14d20 irkh250-14d20 1400 1500 2000 irkl170-14d20 irkl230-14d20 irkl250-14d20 1600 1700 2500 irkh170-16d25 irkh230-16d25 irkh250-16d25 1600 1700 2500 irkl170-16d25 irkl230-16d25 irkl250-16d25 1800 1900 2800 not available irkh230-18d28 not available 1800 1900 2800 not available irkl230-18d28 not available 2000 2100 3200 not available irkh230-20d32 not available 2000 2100 3200 not available irkl230-20d32 not available m 3 x irkl... 3 x i r kh ... 3 x i r kt. . . current-source inverters (also known as sequentially commutated inverters) use phase control (as op- posed to fast) thyristors and diodes. the advantages of current source inverters lie in their ease control, absence of large commutation induc- tances and limited fault currents. their simple construction, illustrated by the circuit on the left, is further enhanced by the use of magn-a- paks which allow the power circuit of an inverter to be realised with 6 capacitors and 9 magn-a-paks all mounted on just one heatsink. the optimal design of current source inverters re- quires the use of diodes with blocking voltages greater than those of the thyristors . this departure from conventional half-bridge modules is catered for by magn-a-pak range with thyristors up to 2000v and diodes up to 3200v. current source inverters current source inverter using 9 magn-a-paks magn-a-paks suitable for current source inverters application notes for all other parameters and characteristics refer to standard irkh... and irkl... modules. sinusoidal conduction @ t j max. rectangular conduction @ t j max. devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irk.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 k/w irk.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 irk.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033 ? r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc)
irk.170, .230, .250 series 5 bulletin i27102 rev. c 05/02 www.irf.com irk t 250 - 14 d20 1 - module type 2 - circuit configuration (see outline table) 3 - current rating 4 - voltage code: code x 100 = v rrm (see voltage ratings table) 5 - current source inverters types ordering information table device code 1 3 45 2 irkl... irku... irkv... irkk... irkn... irkh... irkt... - all dimensions in millimeters (inches) - dimensions are nominal - full engineering drawings are available on request - ul identification number for gate and cathode wire: ul 1385 - ul identification number for package: ul 94v0 outline table note: to order the optional hardware see bulletin i27900
irk.170, .230, .250 series 6 bulletin i27102 rev. c 05/02 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 05/02 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
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